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? semiconductor components industries, llc, 2015 may, 2015 ? rev. 9 1 publication order number: ncp103/d ncp103 150 ma cmos low dropout regulator the ncp103 is 150 ma ldo that provides the engineer with a very stable, accurate voltage with low noise suitable for space constrained, noise sensitive applications. in order to optimize performance for battery operated portable applications, the ncp103 employs the dynamic quiescent current adjustment for very low i q consumption at no?load. features ? operating input voltage range: 1.7 v to 5.5 v ? available in fixed voltage options: 0.9 v to 3.5 v contact factory for other voltage options ? very low quiescent current of typ. 50 a ? standby current consumption: typ. 0.1 a ? low dropout: 75 mv typical at 150 ma ? 1% accuracy at room temperature ? high power supply ripple rejection: 75 db at 1 khz ? thermal shutdown and current limit protections ? stable with a 1 f ceramic output capacitor ? available in udfn 1.0 x 1.0 mm package ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applicaitons ? pdas, mobile phones, gps, smartphones ? wireless handsets, wireless lan, bluetooth ? , zigbee ? ? portable medical equipment ? other battery powered applications figure 1. typical application schematic ncp103 in en out gnd off on v out c out 1 f ceramic c in v in udfn4 mx suffix case 517cu marking diagram www. onsemi.com see detailed ordering, marking and shipping information on page 14 of this data sheet. ordering information pin connection xx = specific device code m = date code 34 1 2 gnd out en in (bottom view) 1 xx m 1
ncp103 www. onsemi.com 2 in out bandgap reference active discharge* mosfet driver with current limit thermal shutdown enable logic gnd auto low power mode en en figure 2. simplified schematic block diagram *active output discharge function is present only in ncp103amxyyytcg devices. yyy denotes the particular v out option. pin function description pin no. pin name description 1 out regulated output voltage pin. a small ceramic capacitor with minimum value of 1 f is needed from this pin to ground to assure stability. 2 gnd power supply ground. 3 en driving en over 0.9 v turns on the regulator. driving en below 0.4 v puts the regulator into shutdown mode. 4 in input pin. a small capacitor is needed from this pin to ground to assure stability. ? epad exposed pad should be connected directly to the gnd pin. soldered to a large ground copper plane allows for effective heat removal. absolute maximum ratings rating symbol value unit input voltage (note 1) v in ?0.3 v to 6 v v output voltage v out ?0.3 v to v in + 0.3 v or 6 v v enable input v en ?0.3 v to v in + 0.3 v or 6 v v output short circuit duration t sc s maximum junction temperature t j(max) 150 c storage temperature t stg ?55 to 150 c esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristis and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per eia/jesd22?a114, esd machine model tested per eia/jesd22?a115, latchup current maximum rating tested per jedec standard: jesd78. thermal characteristics (note 3) rating symbol value unit thermal characteristics, udfn4 1x1 mm thermal resistance, junction?to?air r ja 170 c/w 3. single component mounted on 1 oz, fr 4 pcb with 645 mm 2 cu area.
ncp103 www. onsemi.com 3 electrical characteristics ?40 c t j 85 c; v in = v out(nom) + 1 v for v out options greater than 1.5 v. otherwise v in = 2.5 v, whichever is greater; i out = 1 ma, c in = c out = 1 f, unless otherwise noted. v en = 0.9 v. typical values are at t j = +25 c. min./max. are for t j = ?40 c and t j = +85 c respectively (note 4). parameter test conditions symbol min typ max unit operating input voltage v in 1.7 5.5 v output voltage accuracy ?40 c t j 85 c v out 2.0 v v out ?40 +40 mv v out > 2.0 v ?2 +2 % line regulation v out + 0.5 v v in 5.5 v (v in 1.7 v) reg line 0.01 0.1 %/v load regulation i out = 1 ma to 150 ma reg load 10 30 mv load transient i out = 1 ma to 150 ma or 150 ma to 1 ma in 1 s, c out = 1 f tran load ?30/ +20 mv dropout voltage (note 5) i out = 150 ma v out = 1.5 v v do 180 235 mv v out = 1.85 v 120 165 v out = 2.8 v 75 125 v out = 3.0 v 72 120 v out = 3.1 v 70 120 v out = 3.3 v 65 110 output current limit v out = 90% v out(nom) i cl 150 550 ma ground current i out = 0 ma i q 50 95 a shutdown current v en 0.4 v, v in = 5.5 v i dis 0.01 1 a en pin threshold voltage high threshold low threshold v en voltage increasing v en voltage decreasing v en_hi v en_lo 0.9 0.4 v en pin input current v en = 5.5 v i en 0.3 1.0 a power supply rejection ratio v in = 3.6 v, v out = 3.1 v i out = 150 ma f = 1 khz psrr 75 db output noise voltage v in = 2.5 v, v out = 1.8 v, i out = 150 ma f = 10 hz to 100 khz v n 60 v rms thermal shutdown temperature temperature increasing from t j = +25 c t sd 160 c thermal shutdown hysteresis temperature falling from t sd t sdh 20 c active output discharge resistance v en < 0.4 v, version a only r dis 100 4. performance guaranteed over the indicated operating temperature range by design and/or characterization. production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 5. characterized when v out falls 100 mv below the regulated voltage at v in = v out(nom) + 1 v.
ncp103 www. onsemi.com 4 typical characteristics 1.206 1.204 1.202 1.200 1.198 1.196 1.194 1.192 1.190 1.188 v out , output voltage (v) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 i out = 1 ma i out = 150 ma v in = 2.5 v v out = 1.2 v c in = 1 f c out = 1 f figure 3. output voltage vs. temperature v out = 1.2 v 2.815 v out , output voltage (v) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 figure 4. output voltage vs. temperature v out = 2.8 v 2.810 2.805 2.800 2.795 2.790 2.785 2.780 2.775 2.770 v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f i out = 1 ma i out = 150 ma 80 i q , quiescent current ( a) v in , input voltage (v) 0.0 0.5 figure 5. quiescent current vs. input voltage 70 60 50 40 30 20 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v out = 2.8 v c in = 1 f c out = 1 f 25 c ?40 c 85 c 85 c 25 c ?40 c 600 i gnd , ground current ( a) i out , output current (ma) 0.001 figure 6. ground current vs. output current 550 500 450 400 350 300 250 200 150 100 50 0 1000 0.01 0.1 1 10 100 v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 600 i gnd , ground current ( a) t j , junction temperature ( c) ?40 figure 7. ground current vs. temperature 540 480 420 360 300 240 180 120 60 0 ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 i out = 150 ma 0.1 reg line , line regulation (%/v) t j , junction temperature ( c) figure 8. line regulation vs. output current v out = 1.2 v 0.08 0.06 0.04 0.02 0 ?0.02 ?0.04 ?0.06 ?0.08 ?1 ?40 ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 v in = 1.7 v to 5.5 v v out = 1.2 v i out = 1 ma c in = 1 f c out = 1 f i out = 1 ma v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f
ncp103 www. onsemi.com 5 typical characteristics 0.1 reg line , line regulation (%/v) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 v in = 3.8 v to 5.5 v v out = 2.8 v i out = 1 ma c in = 1 f c out = 1 f figure 9. line regulation vs. temperature v out = 2.8 v 10 reg load , load regulation (mv) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 figure 10. load regulation vs. temperature v out = 1.2 v 10 reg load , load regulation (mv) t j , junction temperature ( c) figure 11. load regulation vs. temperature v out = 2.8 v 100 v drop , dropout voltage (mv) i out , output current (ma) 0 figure 12. dropout voltage vs. output current v out = 2.8 v v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 100 v drop , dropout voltage (mv) t j , junction temperature ( c) ?40 figure 13. dropout voltage vs. temperature ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 i out = 0 ma i out = 150 ma v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 800 i cl , current limit (ma) t j , junction temperature ( c) figure 14. current limit vs. temperature ?40 ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 v in = v out(nom) + 1 v or 2.5 v v out = 90% v out(nom) c in = 1 f c out = 1 f 9 8 7 6 5 4 3 2 1 0 v in = 2.5 v v out = 1.2 v i out = 1 ma to 150 ma c in = 1 f c out = 1 f 0.08 0.06 0.04 0.02 0 ?0.02 ?0.04 ?0.06 ?0.08 ?0.1 v in = 3.8 v v out = 2.8 v i out = 1 ma to 150 ma c in = 1 f c out = 1 f ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 9 8 7 6 5 4 3 2 1 0 90 80 70 60 50 40 30 20 10 0 t j = 85 c t j = ?40 c t j = 25 c 90 80 70 60 50 40 30 20 10 0 i out = 100 ma 750 700 650 600 550 500 450 400 350 300 v out = 2.8 v v out = 1.2 v 150 15 30 45 60 75 90 135 120 105
ncp103 www. onsemi.com 6 typical characteristics 800 i sc , short?circuit current (ma) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 v in = v out(nom) + 1 v or 2.5 v v out = 0 v c in = 1 f c out = 1 f figure 15. short?circuit current vs. temperature 800 i sc , short?circuit current (ma) v in , input voltage (v) 3.0 5.6 5.4 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 figure 16. short?circuit current vs. input voltage 1 v en , voltage on enable pin (v) t j , junction temperature ( c) figure 17. enable voltage threshold vs. temperature 350 i en , enable current (na) t j , junction temperature ( c) figure 18. current to enable pin vs. temperature 100 i dis , disable current (na) t j , junction temperature ( c) ?40 figure 19. disable current vs. temperature ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 v in = 5.5 v v out = 2.8 v c in = 1 f c out = 1 f v out = 0 v c in = 1 f c out = 1 f v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 v out = 2.8 v v out = 1.2 v 750 700 650 600 550 500 450 400 350 300 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 off ?> on on ?> off 315 280 245 210 175 140 105 70 35 0 ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 v en = 5.5 v v en = 0.4 v v in = 5.5 v v out = 2.8 v c in = 1 f c out = 1 f 80 60 40 20 0 ?20 ?40 ?60 ?80 ?100 750 700 650 600 550 500 450 400 350 300
ncp103 www. onsemi.com 7 typical characteristics figure 20. output voltage noise spectral density for v out = 1.2 v, c out = 1 f frequency (khz) 1000 10 1 0.1 0.01 10000 figure 21. output voltage noise spectral density for v out = 2.8 v, c out = 1 f figure 22. output voltage noise spectral density for v out = 2.8 v, c out = 4.7 f output voltage noise ( v/rthz) v in = 2.5 v v out = 1.2 v c in = 1 f c out = 1 f i out = 10 ma 1 ma 60.93 59.11 10 ma 52.73 50.63 150 ma 51.20 48.96 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out frequency (khz) 10000 output voltage noise ( v/rthz) frequency (khz) output voltage noise ( v/rthz) 100 1000 10 1 0.1 0.01 100 1000 10 1 0.1 0.01 100 i out = 1 ma i out = 150 ma 1000 100 10 1 1 ma 79.23 74.66 10 ma 75.03 70.37 150 ma 77.28 72.66 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 1000 100 10 1 i out = 10 ma i out = 1 ma i out = 150 ma 1 ma 80.17 75.29 10 ma 81.28 76.46 150 ma 81.31 76.77 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out i out = 10 ma i out = 1 ma i out = 150 ma 10000 1000 100 10 1 v in = 3.8 v v out = 2.8 v c in = 1 f c out = 4.7 f
ncp103 www. onsemi.com 8 typical characteristics 100 rr, ripple rejection (db) frequency (khz) figure 23. power supply rejection ratio, v out = 1.2 v, c out = 1 f rr, ripple rejection (db) frequency (khz) figure 24. power supply rejection ratio, v out = 2.8 v, c out = 4.7 f 100 esr ( ) i out , output current (ma) 0 figure 25. output capacitor esr vs. output current 0.1 i out = 1 ma i out = 10 ma i out = 150 ma v in = 3.8 v v out = 2.8 v c in = none mlcc, x7r, 1206 size 1 10000 1000 10 100 v in = 3.8 v v out = 2.8 v c in = none mlcc, x7r, 1206 size 100 10 1 0.1 0.01 15 30 45 90 135 150 v in = 5.5 v c in = 1 f c out = 1 f mlcc, x7r, 1206 size unstable operation stable operation i out = 1 ma i out = 10 ma i out = 150 ma 0.1 1 10000 1000 10 100 60 75 120 105 90 80 70 60 50 40 30 20 10 0 90 80 70 60 50 40 30 20 10 0
ncp103 www. onsemi.com 9 typical characteristics figure 26. enable turn?on response, c out = 1 f, i out = 1 ma figure 27. enable turn?on response, c out = 1 f, i out = 150 ma v in = 3.8 v v out = 2.8 v v en = 1 v c out = 1 f c in = 1 f i out = 1 ma 500 mv/div 1 v/div 200 ma/div i inrush 40 s/div v en v out v in = 3.8 v v out = 2.8 v v en = 1 v c out = 1 f c in = 1 f i out = 150 ma 200 ma/div 500 mv/div 1 v/div v en i inrush v out 40 s/div figure 28. enable turn?on response, c out = 4.7 f, i out = 1 ma 500 mv/div 1 v/div 200 ma/div i inrush 40 s/div v en v out v in = 3.8 v v out = 2.8 v v en = 1 v c out = 1 f c in = 1 f i out = 1 ma 200 ma/div 500 mv/div 1 v/div v in = 3.8 v v out = 2.8 v v en = 1 v c out = 1 f c in = 1 f i out = 150 ma figure 29. enable turn?on response, c out = 4.7 f, i out = 150 ma 40 s/div i inrush v en v out 500 mv/div 10 mv/div figure 30. line transient response ? rising edge, v out = 2.8 v, i out = 1 ma 20 s/div t rise = 1 s v in v out figure 31. line transient response ? falling edge, v out = 2.8 v, i out = 1 ma 10 s/div 500 mv/div 10 mv/div t fall = 1 s v out v in v in = 3.8 v to 4.8 v v out = 2.8 v c out = 1 f c in = 1 f i out = 1 ma v in = 4.8 v to 3.8 v v out = 2.8 v c out = 1 f c in = 1 f i out = 1 ma
ncp103 www. onsemi.com 10 typical characteristics figure 32. line transient response ? rising edge, v out = 2.8 v, i out = 150 ma 500 mv/div 20 mv/div 4 s/div v in v out v in = 3.8 v to 4.8 v v out = 2.8 v c out = 10 f c in = 1 f i out = 150 ma 500 mv/div 20 mv/div figure 33. line transient response ? falling edge, v out = 2.8 v, i out = 150 ma 4 s/div v in v out 50 ma/div 20 mv/div figure 34. load transient response ? rising edge, v out = 1.2 v, i out = 1 ma to 150 ma, c out = 1 f, 4.7 f 4 s/div v in = 2.5 v v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc) t rise = 1 s c out = 4.7 f c out = 1 f i out v out figure 35. load transient response ? falling edge, v out = 1.2 v, i out = 1 ma to 150 ma, c out = 1 f, 4.7 f 20 s/div 20 mv/div c out = 1 f c out = 1 f t fall = 1 s v out 20 mv/div figure 36. load transient response ? rising edge, v out = 2.8 v, i out = 1 ma to 150 ma, c out = 1 f, 4.7 f 4 s/div c out = 1 f c out = 4.7 f t rise = 1 s v out figure 37. load transient response ? falling edge, v out = 2.8 v, i out = 1 ma to 150 ma, c out = 1 f, 4.7 f 10 s/div 20 mv/div t fall = 1 s c out = 4.7 f c out = 1 f v out v in = 4.8 v to 3.8 v v out = 2.8 v c out = 1 f c in = 1 f i out = 150 ma t rise = 1 s t fall = 1 s v in = 2.5 v v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc) 50 ma/div i out v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) 50 ma/div i out 50 ma/div i out v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc)
ncp103 www. onsemi.com 11 typical characteristics 500 ma/div 20 mv/div figure 38. load transient response ? rising edge, v out = 2.8 v, i out = 1 ma to 150 ma, v in = 3.8 v, 5.5 v 2 s/div v in = 5.5 v t rise = 1 s i out v out v in = 3.8 v figure 39. load transient response ? falling edge, v out = 2.8 v, i out = 1 ma to 150 ma, v in = 3.8 v, 5.5 v 10 s/div 20 mv/div t fall = 1 s i out v out 1 v/div figure 40. turn?on/off ? slow rising v in 4 ms/div figure 41. short?circuit and thermal shutdown 10 ms/div v out 100 ma/div 50 mv/div v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) 500 ma/div v in = 5.5 v v in = 3.8 v v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) v out v in v in = 5.5 v v out = 2.8 v i out = 10 ma c in = 1 f (mlcc) c out = 1 f (mlcc) overheating full load i out thermal shutdown tsd cycling v in = 5.5 v v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc)
ncp103 www. onsemi.com 12 applications information general the ncp103 is a high performance 150 ma low dropout linear regulator. this device delivers very high psrr (over 75 db at 1 khz) and excellent dynamic performance as load/line transients. in connection with very low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. the device is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. input capacitor selection (c in ) it is recommended to connect at least a 1 f ceramic x5r or x7r capacitor as close as possible to the in pin of the device. this capacitor will provide a low impedance path for unwanted ac signals or noise modulated onto constant input voltage. there is no requirement for the min. /max. esr of the input capacitor but it is recommended to use ceramic capacitors for their low esr and esl. a good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. larger input capacitor may be necessary if fast and large load transients are encountered in the application. output decoupling (c out ) the ncp103 requires an output capacitor connected as close as possible to the output pin of the regulator. the recommended capacitor value is 1 f and x7r or x5r dielectric due to its low capacitance variations over the specified temperature range. the ncp103 is designed to remain stable with minimum effective capacitance of 0.22 f to account for changes with temperature, dc bias and package size. especially for small package size capacitors such as 0402 the effective capacitance drops rapidly with the applied dc bias. there is no requirement for the minimum value of equivalent series resistance (esr) for the c out but the maximum value of esr should be less than 3 . larger output capacitors and lower esr could improve the load transient response or high frequency psrr. it is not recommended to use tantalum capacitors on the output due to their large esr. the equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. enable operation the ncp103 uses the en pin to enable/disable its device and to deactivate/activate the active discharge function. if the en pin voltage is <0.4 v the device is guaranteed to be disabled. the pass transistor is turned?off so that there is virtually no current flow between the in and out. the active discharge transistor is active so that the output voltage v out is pulled to gnd through a 100 resistor. in the disable state the device consumes as low as typ. 10 na from the v in . if the en pin voltage >0.9 v the device is guaranteed to be enabled. the ncp103 regulates the output voltage and the active discharge transistor is turned?off. the en pin has internal pull?down current source with typ. value of 300 na which assures that the device is turned?off when the en pin is not connected. in the case where the en function isn?t required the en should be tied directly to in. output current limit output current is internally limited within the ic to a typical 550 ma. the ncp103 will source this amount of current measured with a voltage drops on the 90% of the nominal v out . if the output voltage is directly shorted to ground (v out = 0 v), the short circuit protection will limit the output current to 580 ma (typ). the current limit and short circuit protection will work properly over whole temperature range and also input voltage range. there is no limitation for the short circuit duration. thermal shutdown when the die temperature exceeds the thermal shutdown threshold (t sd ? 160 c typical), thermal shutdown event is detected and the device is disabled. the ic will remain in this state until the die temperature decreases below the thermal shutdown reset threshold (t sdu 140 c typical). once the ic temperature falls below the 140 c the ldo is enabled again. the thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. power dissipation as power dissipated in the ncp103 increases, it might become necessary to provide some thermal relief. the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. the maximum power dissipation the ncp103 can handle is given by: p d(max) 125 c t a ja (eq. 1) the power dissipated by the ncp103 for given application conditions can be calculated from the following equations: p d v in i gnd @i out i out v in v out (eq. 2)
ncp103 www. onsemi.com 13 figure 42. ja vs. copper area (udfn4) 1 100 120 140 160 180 200 220 0 100 200 300 400 500 600 700 copper heat spreader area (mm 2 ) ja , junction?to?ambient thermal resistance ( c/w) p d(max) , t a = 25 c, 2 oz cu p d(max) , maximum power dissipation (w) p d(max) , t a = 25 c, 1 oz cu ja , 1 oz cu ja , 2 oz cu 240 260 0.9 0.8 0.7 0.6 0.5 0.4 reverse current the pmos pass transistor has an inherent body diode which will be forward biased in the case that v out > v in . due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. power supply rejection ratio the ncp103 features very good power supply rejection ratio. if desired the psrr at higher frequencies in the range 100 khz ? 10 mhz can be tuned by the selection of c out capacitor and proper pcb layout. turn?on time the turn?on time is defined as the time period from en assertion to the point in which v out will reach 98% of its nominal value. this time is dependent on various application conditions such as v out(nom) , c out and t a . for example typical value for v out = 1.2 v, c out = 1 f, i out = 1 ma and t a = 25 c is 90 s. pcb layout recommendations to obtain good transient performance and good regulation characteristics place c in and c out capacitors close to the device pins and make the pcb traces wide. in order to minimize the solution size, use 0402 capacitors. larger copper area connected to the pins will also improve the device thermal resistance. the actual power dissipation can be calculated from the equation above (equation 2). expose pad should be tied the shortest path to the gnd pin.
ncp103 www. onsemi.com 14 ordering information device voltage option marking marking rotation option package shipping ? ncp103amx090tcg 0.9 v aq 0 with active output discharge function udfn4 (pb-free) 3000 / tape & reel ncp103amx100tcg 1.0 v 5 180 ncp103amx105tcg 1.05 v a 0 ncp103amx110tcg 1.1 v e 180 ncp103amx120tcg 1.2 v d 0 ncp103amx125tcg 1.25 v d 180 ncp103amx130tcg 1.3 v ad 0 ncp103amx150tcg 1.5 v e 0 ncp103amx160tcg 1.6 v y 180 ncp103amx180tcg 1.8 v k 180 ncp103amx185tcg 1.85 v f 0 ncp103amx210tcg 2.1 v p 180 ncp103amx220tcg 2.2 v r 180 ncp103amx240tcg 2.4 v al 0 ncp103amx260tcg 2.6 v v 180 ncp103amx270tcg 2.7 v ak 0 ncp103amx280tcg 2.8 v j 0 ncp103amx285tcg 2.85 v k 0 NCP103AMX300TCG 3.0 v l 0 ncp103amx310tcg 3.1 v p 0 ncp103amx330tcg 3.3 v q 0 ncp103amx345tcg 3.45 v ae 0 ncp103amx350tcg 3.5 v 3 180 ncp103amx360tcg 3.6 v av 0 ncp103bmx100tcg 1.0 v 5 270 without active output discharge function udfn4 (pb-free) 3000 / tape & reel ncp103bmx105tcg 1.05 v a 90 ncp103bmx110tcg 1.1 v e 270 ncp103bmx120tcg 1.2 v d 90 ncp103bmx125tcg 1.25 v d 270 ncp103bmx130tcg 1.3 v cd 0 ncp103bmx150tcg 1.5 v e 90 ncp103bmx160tcg 1.6 v y 270 ncp103bmx180tcg 1.8 v k 270 ncp103bmx185tcg 1.85 v f 90 ncp103bmx210tcg 2.1 v p 270 ncp103bmx220tcg 2.2 v r 270 ncp103bmx250tcg 2.5 v ch 0 ncp103bmx260tcg 2.6 v v 270 ncp103bmx280tcg 2.8 v j 90 ncp103bmx285tcg 2.85 v k 90 ncp103bmx300tcg 3.0 v l 90 ncp103bmx310tcg 3.1 v p 90 ncp103bmx330tcg 3.3 v q 90 ncp103bmx345tcg 3.45 v ce 0 ncp103bmx350tcg 3.5 v 3 270 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncp103 www. onsemi.com 15 package dimensions case 517cu issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.03 and 0.07 from the terminal tips. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 bottom view b e 4x note 3 2x 0.05 c pin one reference top view 2x 0.05 c a a1 (a3) 0.05 c 0.10 c c seating plane side view l 3x 1 2 dim min max millimeters a ??? 0.60 a1 0.00 0.05 a3 0.15 ref b 0.20 0.30 d 1.00 bsc d2 0.38 0.58 e 1.00 bsc e 0.65 bsc l 0.20 0.30 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* 1.30 0.30 0.53 4x dimensions: millimeters recommended package outline note 4 e/2 d2 45 4 3 0.65 pitch detail a l2 0.27 0.37 0.58 2x l2 detail a c0.27 x 0.25 1 detail b 0.23 4x detail b 0.10 3x a m 0.10 b c m 0.05 c 3x c0.18 x 45 0.43 3x on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncp103/d bluetooth is a registered trademark of bluetooth sig. zigbee is a registered trademark of zigbee alliance. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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